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Optimization of Cs Deposition in the 1/3 Scale Hydrogen Negative Ion Source for LHD-NBI System
http://hdl.handle.net/10655/2858
http://hdl.handle.net/10655/2858cda0af7c-2481-4516-86d9-deea1a0f789c
Item type | 研究報告書 / Research Paper(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2010-02-05 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Optimization of Cs Deposition in the 1/3 Scale Hydrogen Negative Ion Source for LHD-NBI System | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | hydrogen negative ion | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | ion surce | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | cesium deposition | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | NBI | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18ws | |||||
資源タイプ | research report | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
"Oka, Y.
× "Oka, Y.× Takeiri, Y.× Yu.I., Belchenko× Hamabe, M.× Kaneko, O.× Tsumori, K.× Osakabe, M.× Asano, E.× Kawamoto, T.× Akiyama, R." |
|||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | "A compact cesium deposition system was used for direct deposition of cesim atoms and ion onto the inner surface of the 1/3 scale Hydrogen Negative Ion Source for the LHD-NBI system. A small, well defined amount of cesium deposition in the range of 3-200 mg was tested. Negative ion extraction and acceleration were carried out both in the pure hydrogen operation mode and in the cesium mode. Single Cs deposition of 3-30 mg to the plasma chamber have produced temporary 2-5 times increases of H- yield, but the yield was decreased within several discharge pulses to the previous steady-state value. Two consecutive 30 mg depositions done within a 3-5 hours/ 60 shot interval, produced a similar temporary increase of H- beam, but reached a larger H-yielad steady-state value. Deposition of arger 0.1-0.2 g Cs portions with a 20-120 hours/150-270 shot interval improved the H-yield for a long (2-5 days) period of operation. Directed depositions of Cs to the various walls of the plasma chamber showed approximately the same H- increase. Deposition of 0.13 g Cs to a surface polluted by a water leak, produced a temporary increase, and an H- steady-state level similar to that from a single 30 mg cesium deposition. Deposition of 0.1 g with a cesium plasma produced one half the H-yield obtained by deposition of the same amount of cesium atoms. A higher steady-state H- current value and a smaller rate of H- yield decrease was recorded during the 8 filaments discharge operation, as compared to the 12 filaments operation at the same discharge power." | |||||
書誌情報 |
en : Research Report NIFS-Series 発行日 1999-12-01 |
|||||
報告書番号 | ||||||
NIFS-620 | ||||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0915-633X |