@techreport{oai:nifs-repository.repo.nii.ac.jp:00010038,
 author = {Nakamura,  H. and Ikeda,  K. and Yamaguchi,  S.},
 month = {Aug},
 note = {Generation of electric power by the Nernst effect is a new application of a semiconductor. A key point of this proposal is to find materials with a high thermomagnetic figure-of-merit, which are called Nernst elements. In order to find candidates of the Nernst element, a physical model to describe its transport phenomena is needed.  As the first model, we began with a parabolic two-band model in classical statistics. According to this model, we selected InSb as candidates of the Nernst element and measured their transport coefficients in magnetic fields up to 4 Tesla within a temperature region  from  270K to 330K. In this region, we calculated transport coefficients numerically by our physical model. For InSb, experimental data are coincident with theoretical values in strong magnetic field.},
 title = {Physical Model of Nernst Element},
 year = {1998}
}