@techreport{oai:nifs-repository.repo.nii.ac.jp:00010110,
 author = {"Oka,  Y. and Takeiri,  Y. and Yu.I., Belchenko and Hamabe,  M. and Kaneko,  O. and Tsumori,  K. and Osakabe,  M. and Asano,  E. and Kawamoto,  T. and Akiyama,  R."},
 month = {Dec},
 note = {"A compact cesium deposition system was used for direct deposition of cesim atoms and ion onto the inner surface of the 1/3 scale Hydrogen Negative Ion Source for the LHD-NBI system.  A small, well defined amount of cesium deposition in the range of 3-200 mg was tested.  Negative ion extraction and acceleration were carried out both in the pure hydrogen operation mode and in the cesium mode.  Single Cs deposition of 3-30 mg to the plasma chamber have produced temporary 2-5 times increases of H- yield, but the yield was decreased within several discharge pulses to the previous steady-state value.  Two consecutive 30 mg depositions done within a 3-5 hours/ 60 shot interval, produced a similar temporary increase of H- beam,  but reached a larger H-yielad steady-state value.  Deposition of arger 0.1-0.2 g Cs portions with a 20-120 hours/150-270 shot interval improved the H-yield for a long (2-5 days) period of operation.  Directed depositions of Cs to the various walls of the plasma chamber showed approximately the same H- increase.  Deposition of 0.13 g Cs to a surface polluted by a water leak, produced a temporary  increase, and an H- steady-state level similar to that from a single 30 mg cesium deposition.  Deposition of 0.1 g with a cesium plasma produced one half the H-yield obtained by deposition of the same amount of cesium atoms.  A higher steady-state H- current value and a smaller rate of H- yield decrease was recorded during the 8 filaments discharge operation, as compared to the 12 filaments operation at the same discharge power."},
 title = {Optimization of Cs Deposition in the 1/3 Scale Hydrogen Negative Ion Source for LHD-NBI System},
 year = {1999}
}