| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2022-12-13 |
| タイトル |
|
|
タイトル |
Structural Correlation of Random Lasing Performance in Plasma-Induced Surface-Modified Gallium Nitride |
| 言語 |
|
|
言語 |
eng |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
nanotechnology |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
random laser |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
plasma etching |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
impurity effect |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
semiconductor |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| アクセス権 |
|
|
アクセス権 |
metadata only access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_14cb |
| 著者 |
SHI, Quan
FUJIWARA, Hideki
KAJITA, Shin
YASUHARA, Ryo
TANAKA, Hirohiko
OHNO, Noriyasu
UEHARA, Hiyori
|
| 著者ID |
|
|
内容記述タイプ |
Other |
|
内容記述 |
0000-0002-7666-9742 |
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
The surface of GaN has been modified by a simple method that irradiates the substrate with Ar plasma and impurity codeposition, which is termed CoDE (Co-Deposition Etching). Unique structures were formed by the assistance of a small amount of Mo deposition without degradation of the crystal structure. The size of protrusions on the structure is influenced by the amount of deposited Mo particles. The mechanism for the structure formation is discussed based on transmission electron microscopy (TEM) observations and energy dispersive X-ray spectroscopy (EDS) measurements. Based on the GaN surface roughness, we have demonstrated random laser action in the UV region under photoexcitation. The lowest threshold (0.06 J/cm2) for random lasing was observed where the size of the structure is larger than 0.05 μm2, which was formed under conditions with the least amount of deposition. The correlation between the submicro/nanosize structures generated by plasma irradiation and lasing was evaluated in detail. The critical parameter to optimize the random lasing was determined to be the size of structures that can be modified by the Mo deposition rate. The results confirmed that the emission properties can be controlled by the processing conditions. This random laser fabrication technique is expected to be widely applicable to various direct-bandgap compound semiconductors. |
| 書誌情報 |
ACS Applied Optical Materials
巻 1,
号 1,
p. 412-420,
発行日 2022-12-12
|
| 出版者 |
|
|
出版者 |
American Chemical Society |
| ISSN |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
2771-9855 |
| DOI |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
https://doi.org/10.1021/acsaom.2c00085 |
| 権利 |
|
|
権利情報 |
© 2022 American Chemical Society |
| 関連サイト |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
https://doi.org/10.1021/acsaom.2c00085 |
|
|
関連名称 |
Publisher version |
| NAIS |
|
|
|
13534 |
