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Boron films were deposited on the whole inner surface of a liner, which acts as a large test piece with a surface area of 7000 cm^2. Hydrogen absorption behavior was investigated with the glow discharge in hydrogen. After a strong absorption into the near surface region, hydrogen atoms were slowly and continuously absorbed for 10 hours without saturation. A helium glow discharge was carried out after the hydrogen discharge to investigate hydrogen desorption by the He ion bombardment. Fifteen percents of the absorbed H atoms were desorbed. The strong absorption was observed at the initial phase of the hydrogen discharge after the He discharge due to the evacuation of the H atoms from the surface during the He discharge. The number of absorbed hydrogen atoms was larger than one desorbed during the He discharge, which indicates that hydrogen atoms accumulate in the film when the H_2 and He discharges are repeated alternately. The slow absorption is due to migration of hydrogen atoms deeper into the film enhanced by the ion bombardment. Depth profile measurements with elastic recoil detection (ERD) give a consistent result. Most of the retained hydrogen atoms were released by heating up to 400 degree C. A possibility of the boron films as a protection wall of tritium permeation is suggested. A calculation based on a simple model was discussed with the experimental results. A recombination coefficient was obtained through the calculation of the transient release of the H atoms just after the H_2 discharge. 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  1. NIFS Series
  2. NIFS Report

Dynamic Behavior of Hydrogen Atoms with a Boronized Wall

http://hdl.handle.net/10655/2897
http://hdl.handle.net/10655/2897
5e44c49e-dad8-4a20-a60a-cc53a4b564bc
Item type 研究報告書 / Research Paper(1)
公開日 2010-02-05
タイトル
言語 en
タイトル Dynamic Behavior of Hydrogen Atoms with a Boronized Wall
言語
言語 eng
キーワード
言語 en
主題Scheme Other
主題 hydrogen atoms
キーワード
言語 en
主題Scheme Other
主題 boronized wall
キーワード
言語 en
主題Scheme Other
主題 first wall
キーワード
言語 en
主題Scheme Other
主題 fusion device
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_18ws
資源タイプ research report
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 "Tsuzuki, K.

× "Tsuzuki, K.

WEKO 65157

en "Tsuzuki, K.

Search repository
Inoue, N.

× Inoue, N.

WEKO 65158

en Inoue, N.

Search repository
Sagara, A.

× Sagara, A.

WEKO 65159

en Sagara, A.

Search repository
Noda, N.

× Noda, N.

WEKO 65160

en Noda, N.

Search repository
Motojima, O.

× Motojima, O.

WEKO 65161

en Motojima, O.

Search repository
Mochizuki, T.

× Mochizuki, T.

WEKO 65162

en Mochizuki, T.

Search repository
Hino, T.

× Hino, T.

WEKO 65163

en Hino, T.

Search repository
Yamashina, T."

× Yamashina, T."

WEKO 65164

en Yamashina, T."

Search repository
抄録
内容記述タイプ Abstract
内容記述 "Dynamic behavior of hydrogen atoms in boron films, which is one of candidate materials of the first wall of fusion devices, has been studied. Boron films were deposited on the whole inner surface of a liner, which acts as a large test piece with a surface area of 7000 cm^2. Hydrogen absorption behavior was investigated with the glow discharge in hydrogen. After a strong absorption into the near surface region, hydrogen atoms were slowly and continuously absorbed for 10 hours without saturation. A helium glow discharge was carried out after the hydrogen discharge to investigate hydrogen desorption by the He ion bombardment. Fifteen percents of the absorbed H atoms were desorbed. The strong absorption was observed at the initial phase of the hydrogen discharge after the He discharge due to the evacuation of the H atoms from the surface during the He discharge. The number of absorbed hydrogen atoms was larger than one desorbed during the He discharge, which indicates that hydrogen atoms accumulate in the film when the H_2 and He discharges are repeated alternately. The slow absorption is due to migration of hydrogen atoms deeper into the film enhanced by the ion bombardment. Depth profile measurements with elastic recoil detection (ERD) give a consistent result. Most of the retained hydrogen atoms were released by heating up to 400 degree C. A possibility of the boron films as a protection wall of tritium permeation is suggested. A calculation based on a simple model was discussed with the experimental results. A recombination coefficient was obtained through the calculation of the transient release of the H atoms just after the H_2 discharge. The time behavior at the initial phase of the He discharge was reproduced fairly well by assuming a smaller cross-section for ion induced detrapping."
書誌情報 en : Research Report NIFS-Series

発行日 1997-07-01
報告書番号
NIFS-500
ISSN
収録物識別子タイプ ISSN
収録物識別子 0915-633X
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